SK Hynix has announced the development of a Universal Flash Storage (UFS) 4.1 solution, incorporating what it states is the world’s first 321-layer 1 terabit (Tb) triple-level cell (TLC) 4D NAND flash memory. This new product is designed for mobile applications, particularly in response to the growing demand for high-performance, low-power NAND solutions to support … Continue reading "SK Hynix unveils UFS 4.1 solution with 321-layer NAND"
The post SK Hynix unveils UFS 4.1 solution with 321-layer NAND first appeared on Fone Arena.
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