Samsung Electronics has announced that it has commenced mass production of its first commercial embedded magnetic random access memory (eMRAM) product. It is based on the company’s 28-nanometer(nm) fully-depleted silicon-on-insulator (FD-SOI) process technology, called 28FDS. Samsung’s 28FDS-based eMRAM solution offers unprecedented power and speed advantages with lower cost. Since eMRAM does not require an erase cycle before writing data, its writing speed is approximately a thousand times faster than eFlash. Also, eMRAM uses lower voltages than eFlash, and does not consume electric power when in power-off mode, resulting in great power efficiency. Since an eMRAM module can easily be inserted in the back-end of the process by adding the least number of layers, it has less dependence on the front-end of the process for easy integration with existing logic technologies, such as bulk, fin, and FD-SOI transistor. By combining with 28FD-SOI for better transistor control and minimizing leakage current through body-bias control, Samsung’s eMRAM solution will provide differentiated benefits for a variety of applications including microcontroller unit (MCU), internet of things (IoT), and artificial intelligence (AI). https://www.youtube.com/watch?v=EB14K8Gq5-w Ryan Lee, vice president of foundry marketing at Samsung Electronics said: We are very proud of this achievement in offering right embedded non-volatile memory (eNVM) technology after overcoming complicated ...
Read Here»
Post a Comment Blogger Facebook
We welcome comments that add value to the discussion. We attempt to block comments that use offensive language or appear to be spam, and our editors frequently review the comments to ensure they are appropriate. As the comments are written and submitted by visitors of The Sheen Blog, they in no way represent the opinion of The Sheen Blog. Let's work together to keep the conversation civil.