Samsung Electronics has announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm) eight-gigabit (Gb) Double Data Rate 4 (DDR4) DRAM for the first time in the industry. Mass production of the 1z-nm 8Gb DDR4 will begin within the second half of this year to accommodate next-generation enterprise servers and high-end PCs expected to be launched in 2020. Samsung’s development of the 1z-nm DRAM paves the way for an accelerated global IT transition to next-generation DRAM interfaces such as DDR5, LPDDR5 and GDDR6. Following a full validation with a CPU manufacturer for eight-gigabyte (GB) DDR4 modules, Samsung will be actively collaborating with global customers to deliver an array of upcoming memory solutions. In line with current industry needs, Samsung plans to increase the portion of its main memory production at its Pyeongtaek site, while working with its global IT clients to meet the rising demand for state-of-the-art DRAM products. Jung-bae Lee, executive vice president of DRAM product & technology, Samsung Electronics, said: Our commitment to break through the biggest challenges in technology has always driven us toward greater innovation. We are pleased to have laid the groundwork again for stable production of next-generation DRAM that ensures the highest performance and energy efficiency. As we build out our ...
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