Today, Samsung Electronics revealed that production of its 3-nanometer (nm) manufacturing node using the Gate-All-Around (GAA) transistor architecture has begun. The company said that when matched to its 5nm process, their 3nm process consumes 45% less power, offers improved performance by 23%, and has a 16% smaller surface area. Samsung’s 3nm process node incorporates a … Continue reading "Samsung begins production of world’s first 3nm chips"
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