Samsung Electronics today has announced that it has begun mass production of first 512GB flash storage for next-generation mobile devices and it utilizes the Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips. The 512GB eUFS Consist of eight 64-layer 512Gb V-NAND chips and a controller chip which are stacked together. It also doubles the Samsung’s previous 48-layer V-NAND-based 256GB …
Continue reading "Samsung begins mass production of 512GB eUFS flash memory for flagship smartphones and tablets"
Read Here»
Post a Comment Blogger Facebook
We welcome comments that add value to the discussion. We attempt to block comments that use offensive language or appear to be spam, and our editors frequently review the comments to ensure they are appropriate. As the comments are written and submitted by visitors of The Sheen Blog, they in no way represent the opinion of The Sheen Blog. Let's work together to keep the conversation civil.