Samsung Electronics has announced that it has begun mass production of the industry’s first 512GB embedded Universal Flash Storage (eUFS) 3.0 for next-generation mobile devices. In line with the latest eUFS 3.0 specification, the new Samsung memory delivers twice the speed of the previous eUFS storage (eUFS 2.1). Samsung’s 512GB eUFS 3.0 packs eight of the company’s 5th-gen 512-gigabit (Gb) V-NAND die and integrates a high-performance controller. At 2,100 MB/s, the new eUFS doubles the sequential read rate of Samsung’s latest eUFS memory (eUFS 2.1). Samsung says the new solution’s read speed is four times faster than that of a SATA solid state drive (SSDs) and 20 times faster than a typical microSD card. In addition, the sequential write speed also has been improved by 50 percent to 410MB/s, which is equivalent to that of a SATA SSD. The new memory’s random read and write speeds are at 63,000 and 68,000 Input/Output Operations Per Second (IOPS), respectively. With the significant gains in random read and writes that are more than 630 times faster than general microSD cards (100 IOPS), a number of complex applications can be simultaneously run, while achieving enhanced responsiveness, especially on the newest generation of mobile devices. Apart from 512GB ...
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